RU60D20M n-channel advanced power mosfet symbol rating unit v dss 60 v gss 20 t j 150 c t stg -55 to 150 c i s t c =25c 20 a i dp t c =25c 80 a t c =25c 20 t c =100c 13 t a =25c 14 t a =70c 10 t c =25c 32 t c =100c 13 t a =25c 2.5 t a =70c 1.6 shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 1 www.ruichips.com features pin description pdfn5060 applications dual n-channel mosfet ? 60v/20a, r ds (on) =19m ? (typ.)@v gs =10v r ds (on) =21m ? (typ.)@v gs =4.5v ? ultra low on-resistance ? fast switching speed ? lead free and green devices available (rohs compliant) ? dc/dc converters ? li-battery protection absolute maximum ratings parameter common ratings (t c =25c unless otherwise noted) drain-source voltage gate-source voltage i d p d v a w continuous drain current@t a (v gs =10v) maximum power dissipation@t c maximum power dissipation@t a continuous drain current@t c (v gs =10v) maximum junction temperature storage temperature range diode continuous forward current mounted on large heat sink 300 s pulse drain current tested s1 g1 s2 g2 d2 d2 d1 d1 pin1 pin1
RU60D20M symbol rating unit r ? jc 4c/w r ? ja 50 c/w e as 80 mj min. typ. max. bv dss drain-source breakdown voltage 60 v 1 t j =125c 30 v gs(th) gate threshold voltage 1 2.5 v i gss gate leakage current 1 a 21 28 m ? 19 24 m ? v sd diode forward voltage 1.2 v t rr reverse recovery time 27 ns q rr reverse recovery charge 16 nc r g gate resistance 1.5 ? c iss input capacitance 2150 c oss output capacitance 410 c rss reverse transfer capacitance 190 t d(on) turn-on delay time 13 t r turn-on rise time 59 t d(off) turn-off delay time 31 t f turn-off fall time 26 q g total gate charge 39 q gs gate-source charge 9 q gd gate-drain charge 11 shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 2 www.ruichips.com parameter thermal resistance-junction to case thermal resistance-junction to ambient drain-source avalanche ratings avalanche energy, single pulsed electrical characteristics (t c =25c unless otherwise noted) RU60D20M static characteristics v gs =0v, i ds =250a v ds =60v, v gs =0v symbol i dss drain-source on-state resistance unit a v ds =v gs , i ds =250a v gs =20v, v ds =0v v gs =4.5v, i ds =16a v gs =10v, i ds =20a nc test condition v ds =48v, v gs =10v, i ds =20a v gs =0v, v ds =30v, frequency=1.0mhz v dd =30v,i ds =20a, v gen =10v,r g =4.7 ? i sd =20a, dl sd /dt=100a/s diode characteristics i sd =20a, v gs =0v dynamic characteristics v gs =0v,v ds =0v,f=1mhz gate charge characteristics pf ns r ds(on) parameter zero gate voltage drain current
RU60D20M notes: device marking package packaging quantity reel size tape width RU60D20M RU60D20M pdfn5060 tape&reel 3000 13'' 12mm shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 3 www.ruichips.com ordering and marking information pulse width limited by safe operating area. calculated continuous current based on maximum allowable jun ction temperature. when mounted on 1 inch square copper board, t10sec. limited by tjmax, ias =18a, vdd =48v, rg = 50 , starting tj = 25c. pulse test ; pulse width300s, duty cycle2%. guaranteed by design, not subject to production testing.
RU60D20M shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 4 www.ruichips.com typical characteristics 0 5 10 15 20 25 25 50 75 100 125 150 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 10 20 30 40 50 012345678910 r ds(on) - on - resistance (m ? ) v gs - gate-source voltage (v) drain current ids=20a 0 5 10 15 20 25 30 35 0 255075100125150 p d -power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 i d - drain current (a) v ds - drain-source voltage (v) safe operation area 10s 100s 1ms 10ms dc r ds(on) limited t c =25c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 zthjc - thermal response (c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc =4 c/w
RU60D20M shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 5 www.ruichips.com typical characteristics 0 10 20 30 40 50 0246810 i d - drain current (a) v ds - drain-source voltage (v) output characteristics 2v 3.5v 4v vgs=8,9,10v 0 10 20 30 40 50 0 1020304050 r ds(on) - on resistance (m ? ) i d - drain current (a) drain-source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain-source on resistance v gs =10v i ds =20a t j =25c rds(on)=19m ? 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-drain voltage (v) source-drain diode forward t j =25c t j =150c 0 500 1000 1500 2000 2500 3000 110100 c - capacitance (pf) v ds - drain-source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 10203040 v gs - gate-source voltage (v) q g - gate charge (nc) gate charge vds=48v ids=20a 4.5v
RU60D20M shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU60D20M shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 7 www.ruichips.com package information ?????????????????????????? note: ????????????????????????????????? 1: ? all ?? units ?? are ?? in ?? millimeter. ????????????????????????????????? 2: ? ejector ?? pin ?? mark ?? position ?? may ?? vary ?? from ?? different ?? mold. ????????????????????????????????? 3: ? all ?? dimensions ?? refer ?? to ?? jedec.do ?? not ?? include ?? mold ?? flash ?? or ?? protrusions. pdfn5060 min nom max min nom max min nom max min nom max a 0.90 1.00 1.10 0.035 0.039 0.043 e1 5.70 5.75 5.80 0.224 0.226 0.228 b 0.33 0.41 0.51 0.013 0.016 0.020 e2 3.38 3.58 3.78 0.133 0.141 0.149 c 0.20 0.25 0.30 0.008 0.010 0.012 e d1 4.80 4.90 5.00 0.189 0.193 0.197 h 0.41 0.51 0.61 0.016 0.020 0.024 d2 3.61 3.81 3.96 0.142 0.150 0.156 l 0.51 0.61 0.71 0.020 0.024 0.028 l1 0.06 0.13 0.20 0.002 0.005 0.008 e 5.90 6.00 6.10 0.232 0.236 0.240 @ 0 * 12 * 10 12 k 1.10 * * 0.043 * * m 0.50 * * 0.020 * * inch 1.27bsc 0.05bsc symbol mm inch symbol mm
RU60D20M shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park, nanshan district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
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